| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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15 pcs
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15 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel |
The Vishay Siliconix IRFL110 is a third-generation N-Channel Power MOSFET designed for surface-mount applications. It offers a robust combination of fast switching speeds, a ruggedized device design, and low on-resistance for cost-effectiveness.
Key electrical specifications include a drain-source voltage (VDS) of 100V and a continuous drain current (ID) of 1.5A at 25°C case temperature. The on-resistance (RDS(on)) is 0.54 Ohms at a gate-source voltage (VGS) of 10V. It also features a maximum power dissipation of 3.1W at 25°C case temperature.
The SOT-223 package is suitable for vapor phase, infrared, or wave soldering techniques. Its design allows for easy automatic pick-and-place operations and provides improved thermal performance due to an enlarged tab for heatsinking, enabling power dissipation greater than 1.25W in typical surface mount applications.
This MOSFET is rated for repetitive avalanche and features dynamic dV/dt rating, making it suitable for various power switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.64 | $1.64 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) for the IRFL110 is 100V.
The continuous drain current (ID) is 1.5A at 25°C case temperature and 0.96A at 100°C case temperature.
The on-resistance (RDS(on)) is a maximum of 0.54 Ohms when the gate-source voltage (VGS) is 10V.
The IRFL110 is available in the SOT-223 package and is designed for surface mounting.
The operating junction and storage temperature range is -55°C to +150°C.