| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
129 pcs
|
129 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Lead Style | |
| Mounting Type | |
| SVHC Present | |
| Tape & Reel |
The Infineon Technologies IRFR110PBF is a third-generation N-Channel Power MOSFET. It is designed for surface mounting applications using vapor phase, infrared, or wave soldering techniques.
Key electrical specifications include a drain-source voltage (Vds) of 100V and a continuous drain current (Id) of 4.3A at 25°C case temperature. The on-resistance (Rds(on)) is typically 0.54 Ohms at a gate-source voltage (Vgs) of 10V. It also offers a pulsed drain current (Idm) of 17A and features like dynamic dV/dt rating and repetitive avalanche rating.
This MOSFET is housed in a DPAK (TO-252) surface mount package. It is available in tape and reel for automated assembly processes. The device is suitable for applications requiring fast switching, ruggedized design, and cost-effectiveness.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 100 V.
The continuous drain current is 4.3 A at TC = 25 °C with VGS = 10 V.
The typical RDS(on) is 0.54 Ω at VGS = 10 V.
It comes in a DPAK (TO-252) surface mount package.
The operating junction and storage temperature range is -55 to +150 °C.
The maximum power dissipation is 25 W at TC = 25 °C.