| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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137 pcs
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137 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRFF131 is an N-Channel MOSFET manufactured by Harris Semiconductor. This component utilizes Metal-Oxide Semiconductor technology and operates in enhancement mode.
Key electrical specifications include a minimum breakdown voltage of 60V and a maximum continuous drain current (ID) of 8A. The maximum drain-source on-resistance is rated at 0.18 Ohms. It also has a maximum power dissipation of 20W and a pulsed drain current (IDM) of 24A.
Thermal characteristics include a maximum operating temperature of 150°C. The component is also avalanche rated with an avalanche energy rating (Eas) of 0.242 mJ.
The IRFF131 is packaged in a TO-205 cylindrical metal package with wire terminals at the bottom. The terminal finish is Tin Lead. It is suitable for switching transistor applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum breakdown voltage for the IRFF131 is 60V.
The IRFF131 has a maximum continuous drain current of 8A.
The maximum drain-source on-resistance for the IRFF131 is 0.18 Ohms.
The IRFF131 has a maximum power dissipation of 20W.
The IRFF131 can operate at a maximum temperature of 150°C.
The IRFF131 uses Metal-Oxide Semiconductor FET technology.
The IRFF131 is an N-Channel MOSFET.