| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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151 pcs
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151 pcs | On Request | 1 | On Request | On Request | 8335 | On Request | On Request |
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The IRFF131 is an N-Channel MOSFET designed for switching applications. It offers a minimum breakdown voltage of 60V and a maximum continuous drain current of 8A. The device has a low maximum drain-source on-resistance of 0.18 Ohms.
This MOSFET utilizes Metal-Oxide Semiconductor technology and operates in enhancement mode. It is rated for a maximum power dissipation of 20W and has an avalanche energy rating of 0.242 Mj. The operating temperature range is from -55°C to 150°C.
The IRFF131 is packaged in a TO-205 cylindrical metal package with wire terminals at the bottom. The terminal finish is Tin Lead. It is suitable for through-hole mounting.
Environmental compliance includes RoHS3 compliance, MSL 1, and REACH unaffected status. These specifications make the IRFF131 suitable for various power switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum breakdown voltage for the IRFF131 is 60V.
The IRFF131 can handle a maximum continuous drain current of 8A.
The maximum drain-source on-resistance for the IRFF131 is 0.18 Ohms.
The IRFF131 is rated for a maximum operating temperature of 150°C.
The IRFF131 is supplied in a TO-205 package.
The IRFF131 is RoHS3 Compliant.
The Moisture Sensitivity Level for the IRFF131 is 1 Unlimited.