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11,500 pcs
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11500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IRFF130 is a high-reliability N-Channel Power MOSFET utilizing HEXFET technology. It is designed for applications requiring efficient switching and stable electrical parameters.
Key electrical specifications include a Drain-to-Source Breakdown Voltage (BVDSS) of 100V and a low Static Drain-to-Source On-Resistance (RDS(on)) of 0.18Ω at a continuous drain current of 8.0A (TC=25°C). It also features a Gate Threshold Voltage (VGS(th)) typically 2.0V and a maximum of 4.0V.
This MOSFET is suitable for various applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, and high energy pulse circuits. It is housed in a hermetically sealed TO-205AF (TO-39) package, designed for through-hole mounting.
The device offers repetitive avalanche ratings and dynamic dv/dt ratings, contributing to its robust performance in demanding environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.71 | $0.71 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Drain-to-Source Breakdown Voltage (BVDSS) is 100V.
The typical Static Drain-to-Source On-Resistance (RDS(on)) is 0.18Ω when tested at VGS = 10V and ID1 = 8.0A.
The continuous drain current (ID1) is rated at 8.0A at TC = 25°C with VGS = 10V.
The operating junction and storage temperature range is -55°C to +150°C.
The IRFF130 is supplied in a TO-205AF (TO-39) package.
The RoHS Status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.