IRFB7534PBF The Infineon IRFB7534PBF is an N-channel Power MOSFET with a 60V breakdown voltage and a continuous drain current of up to 232A. It offers a low on-resistance of 2.0mΩ typical.
Mfr Part #:

IRFB7534PBF

Available from 3 distributors
Mfr Name: Infineon
Infineon
The Infineon IRFB7534PBF is an N-channel Power MOSFET with a 60V breakdown voltage and a continuous drain current of up to 232A. It offers a low on-resistance of 2.0mΩ typical.
✓ Total Stock: 25,413 pcs
$ Price Range: $3.84

IRFB7534PBF Available from 3 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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20,000 pcs
20000 pcs On Request 1 On Request On Request 21+ On Request On Request
Non-Authorised Inventory information
3,539 pcs
3539 pcs On Request 1 On Request On Request 21+ On Request On Request
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1,874 pcs
1874 pcs On Request 1 On Request On Request On Request On Request On Request

IRFB7534PBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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IRFB7534PBF Description

Short technical summary and product information.

The Infineon IRFB7534PBF is a high-performance N-channel Power MOSFET from the StrongIRFET™ family, built on HEXFET® technology. It is designed for demanding applications such as brushed and BLDC motor drives, battery-powered circuits, and various DC/DC and AC/DC converter topologies.

 

Key electrical specifications include a maximum drain-to-source breakdown voltage (VDS) of 60V. The device exhibits a low typical on-resistance (RDS(on)) of 2.0mΩ at a gate-to-source voltage (VGS) of 10V and a drain current (ID) of 100A, with a maximum of 2.4mΩ. The continuous drain current is rated at 232A (silicon limited) at 25°C case temperature and 164A at 100°C case temperature. Pulsed drain current can reach up to 944A.

 

This MOSFET is available in multiple package types, including TO-220AB, D2Pak, and TO-262, supporting through-hole and surface-mount configurations. It features enhanced ruggedness, characterized capacitance, and avalanche SOA, along with an improved body diode dV/dt and dI/dt capability. The operating junction and storage temperature range is -55°C to +175°C.

IRFB7534PBF Quick Information

Product Type: MOSFET
Series: HEXFET
Canonical Name: Infineon IRFB7534PBF N-channel Power MOSFET
Subcategory: Power MOSFET

IRFB7534PBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead-Free

IRFB7534PBF Estimated Pricing

Qty Low High
1+ $3.84 $3.84

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRFB7534PBF Features

  • 60V drain-to-source breakdown voltage.
  • 232A maximum continuous drain current.
  • Low 2.0mΩ typical on-resistance.
  • Available in TO-220AB, D2Pak, TO-262.
  • Lead-free and RoHS3 compliant.

IRFB7534PBF Applications

  • Brushed motor drive applications.
  • BLDC motor drive applications.
  • Battery powered circuits.
  • Synchronous rectifier applications.
  • DC/DC and AC/DC converters.

IRFB7534PBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source breakdown voltage?

The maximum drain-to-source breakdown voltage is 60V.

What is the typical on-resistance?

The typical on-resistance is 2.0mΩ at VGS = 10V and ID = 100A.

What is the maximum continuous drain current?

The maximum continuous drain current is 232A (silicon limited) at 25°C.

What are the available package types?

The available package types are TO-220AB, D2Pak, and TO-262.

Is this product RoHS compliant?

Yes, this product is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1 Unlimited.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to +175°C.

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