| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4,030 pcs
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4030 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Lead Style | |
| Mounting Type | |
| SVHC Present |
The Infineon IRFB4332PBF is a HEXFET Power MOSFET specifically engineered for sustain, energy recovery, and pass switch applications in Plasma Display Panels (PDPs).
This device utilizes advanced process technology to achieve a low on-resistance per silicon area and a low E PULSE rating, which helps reduce power dissipation. Key electrical characteristics include a minimum drain-to-source breakdown voltage of 250V and a typical static drain-to-source on-resistance of 29 mΩ at a gate-to-source voltage of 10V and a drain current of 35A.
The IRFB4332PBF features a high repetitive peak current capability of 120A at 100°C case temperature and a continuous drain current of 60A at 25°C case temperature. It operates within a junction and storage temperature range of -55°C to +175°C, with a maximum junction temperature of 175°C.
Packaged in a TO-220AB through-hole package, this MOSFET is suitable for applications requiring robust and reliable performance. Its design considerations include advanced process technology, optimized parameters for PDP applications, low gate charge for fast response, and high repetitive peak current capability for reliable operation.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
250V minimum at VGS=0V, ID=250µA.
TO-220AB.
-55 to +175°C.
60A at VGS=10V, TC=25°C.
29mΩ at VGS=10V, ID=35A.
3.0V typical, 5.0V maximum at VDS=VGS, ID=250µA.
390W at TC=25°C.