KA431AZ-TA
On Semiconductor
The KA431AZ-TA is a voltage reference integrated circuit from On Semiconductor. It features a typical reference voltage of 2.495V and is housed in a TO-92-3 package.
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9,274 pcs
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9274 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
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The Infineon IRFB3307ZPBF is a high-performance N-channel Power MOSFET designed for demanding applications. It features a maximum drain-source voltage (Vds) of 75V and a low typical on-resistance (Rds(on)) of 4.6mOhm at a gate-source voltage (Vgs) of 10V and a drain current (Id) of 75A. The continuous drain current is rated at 128A (silicon limited) at 25°C and 90A at 100°C.
This MOSFET offers improved gate, avalanche, and dynamic dv/dt ruggedness, along with fully characterized capacitance and avalanche SOA. Its enhanced body diode capability further contributes to its robustness.
The IRFB3307ZPBF is packaged in a TO-220AB through-hole package, making it suitable for various power switching applications. Key applications include high-efficiency synchronous rectification in SMPS, uninterruptible power supplies, and high-speed power switching circuits.
With a maximum power dissipation of 230W at 25°C and a junction-to-case thermal resistance of 0.65°C/W, this MOSFET is designed for efficient thermal management in power systems.
| Qty | Low | High |
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| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) is 75V.
The typical on-resistance (Rds(on)) is 4.6mOhm at Vgs = 10V and Id = 75A.
The continuous drain current (Id) is 128A at 25°C (silicon limited) and 90A at 100°C (silicon limited).
The IRFB3307ZPBF is supplied in a TO-220AB package.
The operating junction and storage temperature range is -55°C to +175°C.
