| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5 pcs
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5 pcs | On Request | 1 | On Request | On Request | 704 | On Request | On Request |
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| Manufacturer Name | |
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The IRFAG40 is a single N-channel power MOSFET manufactured by Infineon Technologies. It features a drain-to-source breakdown voltage of 1000V, making it suitable for high-voltage switching applications. The device can handle a continuous drain current of 3.9A at VGS = 10V and a maximum power dissipation of 125W at 25°C. Its package is TO-204AA, designed for through-hole mounting, suitable for power switching and high-voltage circuits. The MOSFET also supports a gate-to-source voltage range of ±20V and has a maximum junction and storage temperature of -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source breakdown voltage (BVDSS) of the IRFAG40 is 1000V.
The maximum continuous drain current at VGS = 10V is 3.9A.
The IRFAG40 comes in a TO-204AA package.
The maximum operating junction and storage temperature range is -55°C to +150°C.
The RoHS status is RoHS3 Compliant.