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5 pcs
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5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Vishay Dale IRF360 is a high-performance N-Channel MOSFET utilizing HEXFET® technology. It offers a breakdown voltage of 400V and a continuous drain current of 25A at 25°C.
Key electrical characteristics include a low static drain-to-source on-resistance of 0.20Ω at VGS = 10V and ID = 16A, and 0.23Ω at VGS = 10V and ID = 25A. The device also features a gate-to-source voltage range of ±20V and a maximum power dissipation of 300W at 25°C.
Packaged in a TO-3 (TO-204AE) through-hole configuration, the IRF360 is designed for applications requiring robust performance and reliability. Its features, such as repetitive avalanche ratings and dynamic dv/dt rating, make it suitable for demanding power electronics circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The IRF360 MOSFET has a breakdown voltage of 400V.
The continuous drain current for the IRF360 at 25°C is 25A.
The typical on-resistance of the IRF360 is 0.20Ω at VGS = 10V and ID = 16A.
The operating junction and storage temperature range for the IRF360 is -55°C to +150°C.
The IRF360 MOSFET is supplied in a TO-3 (TO-204AE) package.
The IRF360 MOSFET is mounted using the through-hole method.