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IRF9610S The Infineon IRF9610S is a P-channel power MOSFET designed for surface-mount applications. It offers a drain-source voltage of -200V and a typical on-resistance of 3Ω at VGS = -10V.
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IRF9610S

Available from 1 distributors
Mfr Name: Infineon
Infineon
The Infineon IRF9610S is a P-channel power MOSFET designed for surface-mount applications. It offers a drain-source voltage of -200V and a typical on-resistance of 3Ω at VGS = -10V.
✓ Total Stock: 245 pcs
$ Price Range: $0.99

IRF9610S Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Braun Electronic Components ✓
Non-Authorised Inventory information
245 pcs
On Request
245 pcs On Request 1 On Request On Request On Request On Request On Request
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IRF9610S Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Gate Charge
Mounting Type
Tape & Reel
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IRF9610S Description

Short technical summary and product information.

The Vishay Siliconix IRF9610S is a third-generation P-channel power MOSFET designed for surface-mount applications. It is available in the D2PAK (TO-263) package, suitable for high current applications due to its low internal connection resistance and ability to dissipate up to 2W.

 

Key electrical characteristics include a maximum drain-source voltage (VDS) of -200V and a continuous drain current (ID) of -1.8A at 25°C. The typical on-resistance (RDS(on)) is 3Ω when the gate-source voltage (VGS) is -10V. It also features a maximum power dissipation (PD) of 20W at 25°C case temperature.

 

This MOSFET is characterized by fast switching speeds, a rugged device design, and ease of paralleling, making it a cost-effective solution for various applications. The D2PAK package provides high power capability and low on-resistance in a surface-mount form factor.

IRF9610S Quick Information

Product Type: Power MOSFET
Series: IRF9610S
Canonical Name: IRF9610S P-Channel Power MOSFET
Subcategory: P-Channel

IRF9610S Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRF9610S Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRF9610S Features

  • P-channel power MOSFET design.
  • Surface-mount D2PAK (TO-263) package.
  • Maximum drain-source voltage of -200V.
  • Typical on-resistance of 3Ω.
  • Fast switching and ease of paralleling.

IRF9610S Applications

  • Suitable for high current applications.
  • Ideal for surface-mount designs.
  • Used in power management circuits.
  • Cost-effective component solution.

IRF9610S FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the IRF9610S?

-200 V

What is the typical on-resistance of the IRF9610S at VGS = -10V?

3 Ω

What package type is the IRF9610S available in?

D2PAK (TO-263)

What is the maximum continuous drain current at 25°C?

-1.8 A

What is the operating junction temperature range?

-55 to +150 °C

IRF9610S Alternate Parts

Same form/fit/function or matching attribute configuration across different manufacturers.
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IRF9610S
IRF9610S
Siliconix
The Siliconix IRF9610S is a P-Channel Power MOSFET designed for surface-mount applications. It features a maximum drain-source voltage of -200V and a typical on-resistance of 3 Ohms at VGS = -10V.
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