| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
50 pcs
|
50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Halogen Free | |
| Lead Style | |
| Mounting Type | |
| SVHC Present | |
| Tape & Reel |
The Vishay Siliconix IRF9610S is a third-generation P-Channel Power MOSFET designed for surface-mount applications. It is available in the D2PAK (TO-263) package, suitable for high current applications due to its low internal connection resistance.
Key electrical specifications include a maximum drain-source voltage (VDS) of -200V and a typical on-resistance (RDS(on)) of 3 Ohms when the gate-source voltage (VGS) is -10V. The device also features a maximum gate charge (Qg max.) of 11 nC. It is rated for continuous drain current up to -1.8A at 25°C case temperature.
This MOSFET is designed for fast switching and ease of paralleling, offering a simple drive requirement. It operates within a junction and storage temperature range of -55°C to +150°C. The component is available in tape and reel packaging.
Environmental compliance includes Lead (Pb)-free and Halogen-free status. The D2PAK (TO-263) package is a surface-mount type, suitable for applications requiring efficient heat dissipation.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.93 | $2.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) is -200 V.
The continuous drain current (Id) is -1.8 A at 25 °C case temperature with VGS at -10 V.
The typical on-resistance (Rds(on)) is 3 Ω at VGS = -10 V.
The IRF9610S is available in a D2PAK (TO-263) surface-mount package.
The operating junction and storage temperature range is -55 °C to +150 °C.
The maximum power dissipation is 20 W at 25 °C case temperature.