| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3 pcs
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3 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRF9130 is a P-Channel enhancement mode silicon gate power MOSFET manufactured by SIL. Designed for high-speed switching applications, it features a breakdown voltage of -100V and a continuous drain current of -12A at 25°C, reducing to -7.5A at 100°C. The on-state resistance (RDS(on)) is specified as 0.30 Ohms at VGS = -10V and ID = -12A, with a minimum of 350mΩ also noted.
This advanced power MOSFET is designed to withstand a specified level of energy in the breakdown avalanche mode. It offers nanosecond switching speeds, linear transfer characteristics, and high input impedance, making it suitable for applications such as switching regulators, converters, motor drivers, and drivers for high power bipolar switching transistors. The device can be operated directly from integrated circuits.
The IRF9130 is housed in a TO-204AA package and is designed for through-hole mounting. It operates within a temperature range of -55°C to 150°C. The device is rated for a single pulse avalanche energy of 500mJ and has a maximum power dissipation of 75W at 25°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-100V
-12A at 25°C, -7.5A at 100°C
0.30 Ohm at VGS = -10V, ID = -12A
-55°C to 150°C
TO-204AA
RoHS3 Compliant