| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,200 pcs
|
1200 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request | |
|
98 pcs
|
98 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
9 pcs
|
9 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1 pcs
|
1 pcs | On Request | 1 | On Request | On Request | 04+ | On Request | On Request |
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The IRF9130 from Vishay Dale is a P-Channel enhancement mode silicon gate power MOSFET designed for high-speed switching applications. It is rated for a continuous drain current of -12A and a breakdown voltage of -100V.
Key electrical characteristics include an on-state resistance (RDS(on)) of 0.30 Ohms and a gate-to-source voltage of ±20V. The device is designed to withstand a specified level of energy in the breakdown avalanche mode, making it suitable for demanding applications.
This MOSFET is packaged in a TO-204AA package and is designed for through-hole mounting. Its advanced design ensures temperature stability of electrical parameters and offers advantages such as voltage control and high input impedance. Applications include switching regulators, converters, and motor drivers.
Absolute maximum ratings include a maximum power dissipation of 75W at 25°C and an operating temperature range of -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.71 | $0.71 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain to source breakdown voltage is -100V.
The continuous drain current is -12A at 25°C and -7.5A at 100°C.
The typical on-state resistance is 0.30 Ohms.
The operating temperature range is -55°C to 150°C.
The IRF9130 is available in the TO-204AA package.