KA431AZ-TA
On Semiconductor
The KA431AZ-TA is a voltage reference integrated circuit from On Semiconductor. It features a typical reference voltage of 2.495V and is housed in a TO-92-3 package.
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3 pcs
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3 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRF9130 is a P-Channel enhancement mode silicon gate power MOSFET manufactured by Samsung Electronics. Designed for high-speed switching applications, this advanced power MOSFET is rated for -12A continuous drain current and a -100V drain-to-source breakdown voltage. It features a low on-state resistance of 0.30 Ohm, making it efficient for applications requiring low gate drive power.
This MOSFET is designed to withstand a specified level of energy in the breakdown avalanche mode. Its applications include switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors. The device is packaged in a TO-204AA (TO-3) case and is suitable for through-hole mounting.
Key electrical characteristics include a gate-to-source voltage rating of ±20V and a maximum power dissipation of 75W at 25°C. The operating temperature range is from -55°C to 150°C. The efficient geometry and unique processing contribute to its superior reverse energy and diode recovery capabilities, along with temperature stability of electrical parameters.
| Qty | Low | High |
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| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-100V
-12A
0.30 Ohm
TO-204AA
-55°C to 150°C
