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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | 08+ | On Request | On Request |
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| Tape & Reel |
The IRF830PBF is a third-generation N-Channel Power MOSFET from NA, housed in the industry-standard TO-220AB package. This component is engineered for a balance of fast switching speeds, rugged design, and cost-effectiveness, making it suitable for power dissipation levels up to approximately 50W.
Key electrical characteristics include a maximum drain-source breakdown voltage of 500V and a gate-source threshold voltage typically around 2V. The on-state resistance (Rds(on)) is specified at a maximum of 1.5Ω at a gate-source voltage of 10V and a drain current of 2.7A. It also features a continuous drain current rating of 4.5A at 25°C case temperature.
The TO-220AB package is widely adopted in commercial-industrial applications due to its low thermal resistance and cost-effectiveness. The IRF830PBF supports simple drive requirements and ease of paralleling, further enhancing its utility in various circuit designs. It operates within a junction and storage temperature range of -55°C to +150°C.
The maximum drain-source voltage is 500V, and the minimum breakdown voltage is 500V.
The IRF830PBF is available in a TO-220AB through-hole package.
The operating junction and storage temperature range is -55°C to +150°C.
The continuous drain current is 4.5A at 25°C case temperature and 2.9A at 100°C.
The typical drain-source on-state resistance is 1.5Ω at VGS=10V and ID=2.7A.
The maximum power dissipation is 74W at 25°C case temperature.
The gate-source threshold voltage is typically 2V with a maximum of 4V.