| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
100 pcs
|
100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Input Capacitance | |
| Mounting Type | |
| Power Dissipation |
The IRF820 is an N-Channel Power MOSFET manufactured by HAR, designed using advanced strip layout-based MESH OVERLAY process for improved performance. This component is suitable for high current and high speed switching applications, including Switch Mode Power Supplies (SMPS).
Key electrical characteristics include a maximum drain-source voltage (Vds) of 500V and a continuous drain current (Id) of 2.5A. The typical on-resistance (RDS(on)) is 0.54 Ohms at a gate-source voltage (Vgs) of 10V. It also features a typical gate charge of 41 nC and a typical input capacitance of 35 pF, contributing to its fast switching capabilities.
The IRF820 is designed for through-hole mounting. Its robust design and performance characteristics make it a reliable choice for power electronics designs requiring efficient switching and high voltage handling.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage for the IRF820 is 500V.
The IRF820 has a continuous drain current of 2.5A.
The typical on-resistance of the IRF820 at Vgs = 10V is 0.54 Ohms.
The typical gate charge for the IRF820 is 41 nC.
The IRF820 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the IRF820 is 1 Unlimited.