| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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15 pcs
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15 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
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| Power Dissipation |
The IRF820 is an N-Channel Power MOSFET manufactured by SIL, utilizing a consolidated strip layout-based MESH OVERLAY process for improved performance. This component is designed for high current and high speed switching applications, making it suitable for Switch Mode Power Supplies (SMPS).
Key electrical characteristics include a maximum drain-source voltage (Vds) of 500V and a continuous drain current (Id) of 2.5A. The typical on-resistance (RDS(on)) is 0.54 Ohms at a gate-source voltage (Vgs) of 10V. It also features a typical gate charge of 41 nC and a typical input capacitance of 35 pF. The maximum power dissipation (Pd) is rated at 75W.
This MOSFET is designed with features such as 100% avalanche tested and improved dv/dt capability. Its pin configuration consists of Gate, Drain, and Source. The IRF820 is identified by its type designator IRF820 and is a MOSFET with an N-Channel control.
Equivalent or alternative parts include IRF044, IRF044SMD, IRF054, IRF054SMD, and IRF100B201. The component is suitable for through-hole mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $8.20 | $8.20 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) of the IRF820 is 500V.
The IRF820 has a maximum continuous drain current (Id) of 2.5A.
The typical Rds(on) at Vgs = 10V is 0.54Ω.
The input capacitance (Ciss) of the IRF820 is approximately 35pF.
The gate charge (Qg) of the IRF820 is 41nC.
The IRF820 uses through-hole mounting type.
The IRF820 is RoHS3 compliant, although this status is unverified.