IRF8010SPBF
Fremont Micro Devices Ltd
The IRF8010SPBF is a 100V Power MOSFET from IR TUBE. It offers a low on-resistance of 15mΩ maximum and a continuous drain current of 80A.
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8,000 pcs
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8000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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4,973 pcs
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4973 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IRF8010PBF is a HEXFET Power MOSFET designed for demanding applications such as high frequency DC-DC converters and Uninterruptible Power Supplies (UPS).
This N-channel MOSFET offers a drain-to-source breakdown voltage of 100V and a maximum on-resistance of 15mΩ at 25°C. It is characterized by low gate-to-drain charge, which helps reduce switching losses, and fully characterized capacitance to simplify design. The device also features fully characterized avalanche voltage and current capabilities.
Packaged in a TO-220AB, the IRF8010PBF is suitable for through-hole mounting. Its robust design and electrical characteristics make it a reliable choice for power management circuits requiring efficient switching and high current handling capabilities.
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| 1+ | $2.54 | $2.54 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source breakdown voltage is 100V.
The typical static drain-to-source on-resistance is 12mΩ.
The maximum continuous drain current is 80A at 25°C.
The IRF8010PBF is supplied in a TO-220AB package.
The operating and storage temperature range is -55°C to +175°C.
Yes, the IRF8010PBF is lead-free.