| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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25 pcs
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25 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRF8010SPBF is a HEXFET Power MOSFET designed for high-frequency DC-DC converters, UPS, and motor control applications. It features a Drain-to-Source Breakdown Voltage of 100V and a low Static Drain-to-Source On-Resistance, typically 12mΩ and a maximum of 15mΩ at 25°C.
Key electrical characteristics include a continuous drain current of 80A at 25°C and 57A at 100°C, with a pulsed drain current up to 320A. The device has a gate threshold voltage ranging from 2.0V to 4.0V. Dynamic parameters include a total gate charge of 81nC typical and output capacitance of 480pF typical.
This MOSFET is available in D2Pak and TO-262 packages, suitable for surface mount applications. It operates within a junction and storage temperature range of -55°C to +175°C. The device is lead-free and RoHS3 compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain current is 80A at 25°C and 57A at 100°C.
The Drain-to-Source Breakdown Voltage is 100V.
The typical Static Drain-to-Source On-Resistance is 12mΩ at 25°C.
The IRF8010SPBF is available in D2Pak and TO-262 packages.
The operating junction and storage temperature range is -55°C to +175°C.
The RoHS Status is RoHS3 Compliant.