BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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500 pcs
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500 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request |
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| Halogen Free | |
| SVHC Present | |
| Tape & Reel |
The IRF7807VTRPBF from Infineon Technologies is an N-Channel MOSFET designed for power switching applications. It offers a drain-to-source voltage (Vdss) of 30V and can handle a continuous drain current (Id) of 8.3A at 25°C.
Key electrical characteristics include a maximum on-resistance (Rds On) of 25mOhm at 7A and 4.5V Vgs, and a gate threshold voltage (Vgs(th)) of 3V at 250µA. The maximum gate charge (Qg) is 14nC at 5V, and the gate-to-source voltage (Vgs) is rated up to ±20V.
This MOSFET has a maximum power dissipation of 2.5W and operates within a temperature range of -55°C to 150°C. It is housed in an 8-SOIC surface mount package, making it suitable for various electronic designs requiring efficient power management.
Designed with MOSFET (Metal Oxide) technology, the IRF7807VTRPBF is part of the HEXFET® series, known for its performance and reliability in demanding applications.
30V.
8-SOIC surface-mount package, with supplier device package 8-SO.
-55°C to 150°C junction temperature.
8.3A at 25°C ambient temperature.
25mΩ at 7A drain current and 4.5V gate-source voltage.
±20V.
3V at 250µA drain current.