IRF7807VD1TRPBF
Vishay
The Vishay Dale IRF7807VD1TRPBF is an N-Channel MOSFET with a 30V drain-source breakdown voltage and a continuous drain current of 8.3A. It features an Rds On of 25 mΩ at 4.5V.
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100 pcs
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100 pcs | On Request | 1 | On Request | On Request | 06+ | On Request | On Request |
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The Infineon Technologies IRF7807VD1TRPBF is a high-performance N-Channel MOSFET suitable for a range of electronic designs. It offers a drain-source breakdown voltage of 30V and can handle a continuous drain current of 8.3A at 25°C.
Key electrical characteristics include a low Rds On of 25 mΩ at 4.5V gate-source voltage and a typical gate threshold voltage of 3V. The device has a maximum gate voltage rating of ±20V and a typical gate charge of 14 nC at 4.5V.
This MOSFET is housed in an 8-SOIC package and is designed for surface mounting. It operates within a temperature range of -55°C to 150°C and has a power dissipation of 2.5W at 25°C ambient temperature.
Ideal for applications requiring efficient switching and power management, the IRF7807VD1TRPBF provides reliable performance in a compact form factor.
30V
-55°C to 150°C
8-SOIC surface mount package
8.3A at 25°C ambient
25mOhm maximum at 4.5V gate-source voltage and 7A drain current
3V typical at 250µA
±20V