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IRF7807VD1TRPBF The Vishay Dale IRF7807VD1TRPBF is an N-Channel MOSFET with a 30V drain-source breakdown voltage and a continuous drain current of 8.3A. It features an Rds On of 25 mΩ at 4.5V.
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IRF7807VD1TRPBF

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale IRF7807VD1TRPBF is an N-Channel MOSFET with a 30V drain-source breakdown voltage and a continuous drain current of 8.3A. It features an Rds On of 25 mΩ at 4.5V.
✓ Total Stock: 130 pcs

IRF7807VD1TRPBF Available from 1 distributor

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130 pcs
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130 pcs On Request 1 On Request On Request 06+ On Request On Request
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IRF7807VD1TRPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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IRF7807VD1TRPBF Description

Short technical summary and product information.

The IRF7807VD1TRPBF from Vishay Dale is a high-performance N-Channel MOSFET designed for various power switching applications. It offers a drain-source breakdown voltage of 30V and can handle a continuous drain current of up to 8.3A at 25°C. The MOSFET exhibits a low on-resistance (Rds On) of 25 mΩ when driven by a 4.5V gate-source voltage, ensuring efficient power transfer.

 

This component features a typical gate charge of 14 nC at 4.5V and a gate threshold voltage of 3V at 250A. The maximum continuous gate-source voltage is ±20V. With a power dissipation rating of 2.5W at 25°C, it operates within a temperature range of -55°C to 150°C.

 

The IRF7807VD1TRPBF is supplied in an 8-SOIC package, suitable for surface mount applications. Its robust design and specifications make it a reliable choice for power management circuits, motor control, and other demanding electronic systems.

IRF7807VD1TRPBF Quick Information

Product Type: MOSFET
Series: IRF7807VD1
Canonical Name: IRF7807VD1TRPBF N-Channel MOSFET 30V 8.3A 8-SOIC
Subcategory: N-Channel

IRF7807VD1TRPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRF7807VD1TRPBF Features

  • N-Channel MOSFET with 30V drain-source voltage.
  • Continuous drain current of 8.3A at 25°C.
  • Low Rds On of 25 mΩ at 4.5V gate drive.
  • Surface mountable 8-SOIC package.
  • Wide operating temperature range of -55°C to 150°C.

IRF7807VD1TRPBF Applications

  • Suitable for power switching applications.
  • Ideal for motor control circuits.
  • Used in power management systems.
  • Applicable in DC-DC converters.

IRF7807VD1TRPBF FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the IRF7807VD1TRPBF?

The drain-source breakdown voltage is 30V.

What is the continuous drain current for the IRF7807VD1TRPBF?

The continuous drain current is 8.3A at 25°C.

What is the Rds On for the IRF7807VD1TRPBF?

The Rds On is 25 mΩ at 4.5V gate-source voltage, measured at 7A.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 150°C.

What package type is the IRF7807VD1TRPBF supplied in?

It is supplied in an 8-SOIC package for surface mounting.

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