C0805F473K1RAC
Yageo
The Yageo C0805F473K1RAC is a ceramic capacitor with RoHS3 compliance and an MSL of 1 Unlimited. It is unaffected by REACH regulations.
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100 pcs
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100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRF7495PbF is a HEXFET Power MOSFET manufactured by IRF, suitable for high-frequency DC-DC converter applications. It offers a drain-to-source voltage of 100V and a continuous drain current of 7.3A at 25°C with a VGS of 10V.
Key electrical characteristics include a low static drain-to-source on-resistance of 18mΩ typical, a gate threshold voltage between 2.0V and 4.0V, and a total gate charge of 34nC typical. The device exhibits fast switching times with a typical fall time of 36ns and a rise time of 13ns.
This MOSFET is housed in a surface-mount SO-8 package. Its design benefits include low gate-to-drain charge to reduce switching losses and fully characterized capacitance, simplifying design. The operating junction temperature range is -55°C to +150°C.
Applications include high-frequency DC-DC converters. The part is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
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| 1+ | $2.93 | $2.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 100V.
The device is housed in an SO-8 surface-mount package.
The junction and storage temperature range is -55°C to +150°C.
The continuous drain current is 7.3A at TA=25°C with VGS=10V, and 4.6A at TA=100°C.
The maximum on-resistance is 22mΩ, with a typical value of 18mΩ at TJ=25°C.
The maximum power dissipation is 2.5W at TA=25°C.
The total gate charge is 34nC typical and 51nC maximum.