| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,264 pcs
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2264 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IRF7413 is an N-channel Power MOSFET designed for applications such as high frequency DC-DC converters. It offers benefits like low gate charge to reduce switching losses and fully characterized capacitance for simplified design.
Key electrical specifications include a 30V Drain-to-Source Breakdown Voltage and a maximum Continuous Drain Current of 12A at 25°C (V GS = 10V). The Static Drain-to-Source On-Resistance is a maximum of 11mΩ at V GS = 10V. Dynamic characteristics include a Total Gate Charge of 44nC (typical) and an Effective Output Capacitance of 1020pF.
This MOSFET is housed in a SOIC-8 package and is suitable for surface mounting. It operates within a temperature range of -55°C to +150°C. The part also includes diode characteristics with a maximum Reverse Recovery Time of 75ns and a maximum Reverse Recovery Charge of 110nC.
Designed for efficiency, the IRF7413 is a reliable component for power management circuits.
The continuous drain current is 12A at 25°C with a V GS of 10V.
The Drain-to-Source Breakdown Voltage is 30V.
The IRF7413 is supplied in a SOIC-8 package.
The operating junction and storage temperature range is -55°C to +150°C.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
The REACH status is REACH Unaffected.