| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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510 pcs
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510 pcs | On Request | 1 | On Request | On Request | 2012 | On Request | On Request | |
|
297 pcs
|
297 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
36 pcs
|
36 pcs | On Request | 1 | On Request | On Request | 237M | On Request | On Request |
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The Vishay Dale IRF7413 is an N-channel Power MOSFET designed for high frequency applications, particularly in SMPS and DC-DC converters. It offers benefits such as low gate charge to reduce switching losses and fully characterized capacitance for simplified design.
Key electrical specifications include a continuous drain current of 12A at 25°C (VGS=10V) and a pulsed drain current up to 96A. The breakdown voltage is 30V (VDS). It has a low on-resistance of 11mΩ at VGS=10V and a gate-to-source voltage range of ±20V.
Thermal characteristics include a junction-to-ambient thermal resistance of 50°C/W. The operating and storage temperature range is -55°C to +150°C. The MOSFET is housed in a SOIC-8 package and is suitable for surface mounting.
This component is characterized by its low gate-to-drain charge, contributing to reduced switching losses. It also features fully characterized avalanche voltage and current, simplifying design considerations for engineers.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The continuous drain current is 12A at 25°C with a VGS of 10V.
The Drain-to-Source Breakdown Voltage is 30V.
The typical Static Drain-to-Source On-Resistance is 11mΩ at VGS = 10V.
The operating junction and storage temperature range is -55°C to +150°C.
The IRF7413 is available in a SOIC-8 package.