| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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11 pcs
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11 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRF7380PBF is a HEXFET Power MOSFET designed for high-frequency DC-DC converters. It offers a drain-to-source breakdown voltage of 80V and a maximum static drain-to-source on-resistance of 73mOhm at VGS = 10V.
Key electrical characteristics include a typical gate threshold voltage of 2.0V, a continuous drain current of 3.6A at 25°C, and a pulsed drain current up to 29A. The device is designed with low gate-to-drain charge to reduce switching losses and features fully characterized capacitance, including effective Coss, to simplify design. It also has a fully characterized avalanche voltage and current.
Packaged in an SO-8 surface-mount package, the IRF7380PBF operates within a junction temperature range of -55°C to +150°C. Its thermal resistance is 42°C/W for junction-to-drain lead and 62.5°C/W for junction-to-ambient (PCB mount).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source breakdown voltage is 80V.
The typical static drain-to-source on-resistance is 73mOhm.
The typical gate threshold voltage is 2.0V.
The continuous drain current at 25°C is 3.6A.
The operating junction and storage temperature range is -55°C to +150°C.
The IRF7380PBF is available in an SO-8 package.