| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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419 pcs
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419 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request | |
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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-04-29 00:15:10 |
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The Vishay Dale IRF7380PBF is a HEXFET Power MOSFET suitable for high frequency DC-DC converter applications. It offers a breakdown voltage of 80V and a maximum static drain-to-source on-resistance of 73mΩ at a gate-to-source voltage of 10V. The continuous drain current is rated at 3.6A at 25°C ambient temperature.
This MOSFET is characterized by low gate-to-drain charge to reduce switching losses and fully characterized capacitance, including effective Coss, to simplify design. It comes in a surface-mount SO-8 package.
Key electrical parameters include a gate threshold voltage of up to 4V and a continuous drain current of 2.9A at 100°C ambient temperature. The operating and storage temperature range is -55°C to +150°C.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source breakdown voltage is 80V minimum at 25°C.
The device is housed in an SO-8 surface-mount package.
The operating junction and storage temperature range is -55°C to +150°C.
The static drain-to-source on-resistance is typically 73mOhm maximum at 25°C.
The continuous drain current is 3.6A at 25°C with VGS=10V, derated to 2.9A at 100°C.
The total gate charge is typically 15nC at 25°C.
The junction-to-ambient thermal resistance is 62.5°C/W (PCB mounted).