TK5A65DA(STA4
Toshiba
The Toshiba TK5A65DA(STA4,Q,M) is an N-channel MOSFET with a 650V Drain to Source Voltage and 4.5A Continuous Drain Current. It is housed in a TO-220SIS package.
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3 pcs
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3 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRF520 is an N-Channel Power MOSFET manufactured by HAR, designed for various switching applications. It offers a Drain-Source Breakdown Voltage of 100V and a Continuous Drain Current of up to 9.2A at 25°C case temperature.
Key electrical characteristics include an On-Resistance (RDS(on)) of 0.27 Ohms at VGS = 10V, a Gate Charge (Qg) of 16nC (max), and a Gate Threshold Voltage (VGS-th) of 4V (max). The device also features fast switching speeds with a rise time of 30nS and a fall time of 20nS.
This MOSFET is suitable for applications such as switching high power devices, controlling motor speeds, and use in DC-DC converters. It is supplied in the industry-standard TO-220AB package, which is commonly preferred for commercial-industrial applications due to its low thermal resistance and cost-effectiveness. The operating temperature range is from -55°C to +175°C.
The IRF520 is compliant with RoHS3 standards.
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| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage for the IRF520 is 100V.
The IRF520 has a continuous drain current of 9.2A at 25°C case temperature and 6.5A at 100°C case temperature.
The typical on-resistance (RDS(on)) for the IRF520 is 0.27 Ohms when the gate-source voltage is 10V.
The IRF520 can operate in a junction and storage temperature range of -55°C to +175°C.
The IRF520 is available in the TO-220AB package.
The gate threshold voltage (VGS-th) for the IRF520 is a maximum of 4V.