| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,747 pcs
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3747 pcs | On Request | 1 | On Request | On Request | 1516+1530+ | On Request | On Request |
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The Toshiba TK5A65DA(STA4,Q,M) is a high-performance N-channel MOSFET designed for various power switching applications. It features a maximum Drain to Source Voltage of 650V and a continuous Drain Current rating of 4.5A, making it suitable for demanding electronic circuits.
Key electrical characteristics include a typical Gate Threshold Voltage of 4.4V and a typical On-Resistance of 1.67Ω at 10V. The device also has a typical Input Capacitance of 700pF at 25V and a typical Gate Charge of 16nC at 10V. With a power dissipation of 35W, it offers efficient operation.
This MOSFET is supplied in the TO-220SIS package, which is designed for through-hole mounting. Its robust construction and reliable performance make it a valuable component for power supply designs, motor control, and other industrial applications requiring efficient power management.
The maximum drain-to-source voltage is 650V.
It is available in a TO-220SIS through-hole package.
4.4V typical.
16nC typical at 10V.
700pF typical at 25V.
4.5A typical.
1.67Ω maximum at 10V.