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2,017 pcs
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2017 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
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The Vishay Dale IRF510A is an N-Channel Power MOSFET housed in a TO-220AB package. This component is designed for robust performance with a Drain-to-Source Breakdown Voltage (BVDSS) of 100V and a Continuous Drain Current (ID) of 5.6A at 25°C case temperature.
Key electrical characteristics include a typical On-State Resistance (RDS(on)) of 0.289 Ohms at VGS=10V and ID=2.8A, and a maximum of 0.4 Ohms. The Gate Threshold Voltage (VGS(th)) is typically 4V. The device operates within a wide temperature range from -55°C to +175°C.
With features like Avalanche Rugged Technology and a lower input capacitance, the IRF510A is suitable for applications requiring reliable power switching. Its TO-220AB package allows for through-hole mounting, facilitating integration into circuit designs.
The drain-to-source voltage rating is 100V.
The continuous drain current is 5.6A at 25°C case temperature and 2.0A at 100°C.
The typical on-resistance is 0.289Ω at VGS=10V, ID=2.8A, with a maximum of 0.4Ω.
The typical gate threshold voltage is 4V at VDS=5V, ID=250µA.
The operating junction and storage temperature range is -55°C to 175°C.
The IRF510A is available in a TO-220AB through-hole package.
The typical input capacitance is 62.5pF at VDS=80V, VGS=10V, ID=5.6A.