PSMN8R5-100PS
Nexperia USA Inc.
The Nexperia PSMN8R5-100PS is an N-channel MOSFET designed for power applications. It offers a 100V drain-source voltage and 100A continuous drain current.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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9,327 pcs
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9327 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
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1,574 pcs
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1574 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
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| Military Grade | |
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| Tape & Reel |
The Infineon IRF2804PBF is a HEXFET® Power MOSFET utilizing advanced processing techniques to achieve extremely low on-resistance per silicon area. This device features a continuous drain current of 75A at 25°C and a drain-source voltage of 40V.
Key electrical characteristics include an on-resistance of 2.0mΩ at VGS = 10V and a maximum power dissipation of 270W at 25°C. The MOSFET operates with a gate-to-source voltage range of ±20V and can handle pulsed drain currents up to 300A.
With an operating junction temperature range of -55°C to +175°C, the IRF2804PBF is suitable for demanding applications. It is available in a TO-220AB package, designed for through-hole mounting.
This MOSFET is lead-free and designed for a wide variety of applications requiring efficient and reliable power switching.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.63 | $2.63 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDSS) for the IRF2804PBF is 40V.
The continuous drain current (ID) at TC = 25°C, VGS @ 10V is 75A (Silicon Limited).
The on-resistance (RDS(on)) is a maximum of 2.0mΩ when VGS is 10V.
The operating junction temperature range is -55°C to +175°C.
The IRF2804PBF is supplied in a TO-220AB package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.