| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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50,000 pcs
|
50000 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
1,200 pcs
|
1200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
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| Halogen Free |
The Infineon IRF250P224 is a high-performance N-channel MOSFET designed for demanding applications. It features a maximum drain-source voltage (Vds) of 250V and a continuous drain current (ID) of 128A at 25°C case temperature.
With a low on-resistance (Rds(on)) of 9.0mΩ typical at VGS = 10V and ID = 58A, this MOSFET offers efficient power handling. It is characterized by improved gate, avalanche, and dynamic dv/dt ruggedness, along with fully characterized capacitance and avalanche SOA.
The IRF250P224 is housed in a TO-247AC package, suitable for through-hole mounting. Its robust design makes it suitable for applications such as UPS and inverters, half-bridge and full-bridge topologies, resonant mode power supplies, DC/DC and AC/DC converters, OR-ing and redundant power switches, and motor drive applications.
This component is Pb-Free, RoHS Compliant, and Halogen-Free, meeting environmental standards.
250V.
TO-247AC.
-55°C to +175°C.
128A.
9.0mΩ at VGS=10V, ID=58A.
556W.
512A.