IRF250P224
Infineon
The Infineon IRF250P224 is an N-channel MOSFET with a 250V drain-source voltage and a continuous drain current of 128A. It is supplied in a TO-247AC package.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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21,000 pcs
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21000 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
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5,821 pcs
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5821 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
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| Halogen Free |
The Infineon IRF100B202 is a HEXFET® Power MOSFET designed for demanding applications. It offers a drain-to-source breakdown voltage of 100V and a typical on-resistance of 7.2mΩ at a gate-to-source voltage of 10V and a drain current of 58A. The device boasts improved gate, avalanche, and dynamic dV/dt ruggedness, along with enhanced body diode dV/dt and dI/dt capability.
This MOSFET is characterized by its fully specified capacitance and avalanche SOA. It operates with a gate threshold voltage typically between 2V and 4V. Leakage current is minimal, with a drain-to-source leakage of 20µA maximum at 100V.
Packaged in a TO-220AB form factor, the IRF100B202 is suitable for through-hole mounting. It is supplied in tubes with a standard pack quantity of 50 units. The device is lead-free and RoHS compliant, making it suitable for environmentally conscious designs.
Applications include brushed and BLDC motor drives, battery-powered circuits, half-bridge and full-bridge topologies, synchronous rectifier applications, resonant mode power supplies, and DC/DC and AC/DC converters.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.11 | $3.11 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source breakdown voltage is 100V.
The typical RDS(on) is 7.2mΩ at VGS = 10V.
The gate threshold voltage is 2V (typical) and up to 4V (maximum).
The device comes in a TO-220AB package.
Yes, it is RoHS3 compliant.
The maximum RDS(on) is 8.6mΩ.