| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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30 pcs
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30 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
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| Power Dissipation |
The IRF1310N is a Fifth Generation HEXFET Power MOSFET from International Rectifier, utilizing advanced processing for extremely low on-resistance per silicon area. This, combined with fast switching speeds and a ruggedized design, makes it an efficient and reliable component for various applications.
Key electrical specifications include a Drain-to-Source Breakdown Voltage of 100V and a Continuous Drain Current of 42A at 25°C. The Static Drain-to-Source On-Resistance is as low as 0.036 Ohms at a gate-source voltage of 10V and a drain current of 22A. The device operates within a junction and storage temperature range of -55°C to +175°C.
The TO-220AB package is commonly used in commercial-industrial applications for power dissipation levels up to approximately 50 watts. Its low thermal resistance and package cost contribute to its wide acceptance. The MOSFET offers fast switching characteristics with typical rise and fall times of 56ns and 40ns, respectively.
This MOSFET is fully avalanche rated and features dynamic dv/dt rating, making it suitable for demanding power applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
42A at 25°C and 30A at 100°C.
160W at 25°C.
±20V.
TO-220AB package.
-55°C to +175°C.
Yes, it is RoHS3 compliant.