| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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155 pcs
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155 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRF1310N from Vishay Dale is a Fifth Generation HEXFET Power MOSFET utilizing advanced processing for extremely low on-resistance per silicon area. This device offers fast switching speeds and a ruggedized design, making it suitable for a wide variety of applications.
Key electrical specifications include a continuous drain current of 42A at 25°C and 30A at 100°C, with a pulsed drain current up to 140A. The static drain-to-source on-resistance is a low 0.036 Ohms at a gate-to-source voltage of 10V and a drain current of 22A. The drain-to-source breakdown voltage is 100V.
This MOSFET operates within a junction and storage temperature range of -55°C to +175°C. It is housed in a TO-220AB package, which is commonly preferred for commercial-industrial applications due to its low thermal resistance and cost-effectiveness. The mounting type is through-hole.
The device boasts fast switching characteristics with a typical rise time of 56ns and a fall time of 40ns. It also features a dynamic dv/dt rating and is fully avalanche rated.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The continuous drain current for the IRF1310N at 25°C is 42A.
The maximum drain-to-source breakdown voltage of the IRF1310N is 100V.
The static drain-to-source on-resistance for the IRF1310N is 0.036 Ohms at VGS = 10V and ID = 22A.
The operating junction and storage temperature range for the IRF1310N is -55°C to +175°C.
The IRF1310N MOSFET is supplied in a TO-220AB package.