IRFR5305TRPBF
Infineon
The Infineon IRFR5305TRPBF is a single MOSFET transistor. It features RoHS3 compliance and an MSL of 1 Unlimited.
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1,300 pcs
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1300 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request | |
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311 pcs
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311 pcs | On Request | 1 | On Request | On Request | 1108+ | On Request | On Request |
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The IRF1010NSPBF from Vishay Siliconix is a HEXFET Power MOSFET featuring advanced process technology for ultra low on-resistance. This N-Channel MOSFET is rated for a Drain-Source Voltage (VDSS) of 55V and boasts a typical on-resistance (RDS(ON)) of 11 milliohms at a gate-source voltage of 10V and drain current of 25A. It can handle a continuous drain current (ID) of up to 85A at 25°C case temperature and a pulsed drain current (IDM) of 340A.
With a maximum power dissipation (PD) of 180W at 25°C, the IRF1010NSPBF is suitable for demanding power applications. It operates within a temperature range of -55°C to 175°C. The device is housed in a D2Pak surface mount package, facilitating efficient board space utilization and thermal management.
Key features include dynamic dv/dt rating, 175°C operating temperature, fast switching capabilities, and full avalanche rating. The Vishay Siliconix IRF1010NSPBF is designed for applications requiring high current and low on-resistance characteristics.
55V.
85A at Tc=25°C, 60A at Tc=100°C.
11mOhm at Vgs=10V, Id=25A.
180W at Tc=25°C.
Maximum 175°C.
D2Pak surface mount package.
±20V.
