TMBT3906.LMT
Toshiba
The Toshiba TMBT3906.LMT is a single bipolar junction transistor (BJT) in the Transistors - Bipolar (BJT) - Single category. It is RoHS3 Compliant and has an MSL rating of 1 Unlimited.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,320 pcs
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1320 pcs | On Request | 1 | On Request | On Request | 01+ | On Request | On Request |
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The IR2172S from Infineon Technologies is a monolithic current sensing integrated circuit specifically designed for motor drive applications. It accurately senses motor phase current through an external shunt resistor, converting the analog signal to a digital PWM output for simplified interface with microcontrollers.
Key features include a high-voltage floating channel capable of up to 600V, enabling its use in high-side sensing configurations. The device provides a fast, independent overcurrent trip signal with a typical trip time of 1.5µs, crucial for protecting power devices like IGBTs during short-circuit conditions. The typical quiescent current (Iqbs) is 1mA, allowing for efficient bootstrap power supply operation.
This IC offers a typical operating frequency of 40kHz and a gain temperature drift of 20ppm/°C, ensuring stable performance across varying conditions. The input voltage range is ±5V, with a maximum input voltage of 5V. The output format is a discrete PWM signal, eliminating the need for an A/D converter on the receiving end.
The IR2172S is available in both 8-Lead SOIC and 8-Lead PDIP packages, supporting surface mount and through-hole mounting respectively. Its open-drain outputs provide flexibility for interfacing with systems operating from 3.3V to 15V.
| Qty | Low | High |
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| 1+ | $1.14 | $1.14 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum high side offset voltage is 600V.
The typical operating frequency is 40kHz.
The typical overcurrent trip time is 1.5µs.
The typical overcurrent trip level is ±260mV.
The IR2172S is available in an 8-Lead SOIC package.
The maximum junction temperature is 150°C.
The storage temperature range is -55°C to 150°C.