| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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341 pcs
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341 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request |
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The IR2106SPBF from Infineon is a high voltage, high speed power MOSFET and IGBT driver. It is designed with independent high and low side referenced output channels, enabling bootstrap operation and full functionality up to 600V. The device is tolerant to negative transient voltage and immune to dV/dt.
Key electrical features include a gate drive supply range of 10 to 20V and compatibility with 3.3V, 5V, and 15V logic inputs. It also incorporates undervoltage lockout for both channels and matched propagation delays for consistent performance. The output drivers are built with a high pulse current buffer stage to minimize driver cross-conduction.
This gate driver IC is available in packages such as 14-Lead PDIP and 14-Lead SOIC. Its robust monolithic construction is achieved through proprietary HVIC and latch immune CMOS technologies, making it suitable for demanding power applications.
Absolute maximum ratings include a high side floating supply voltage of up to 625V and a low side/logic supply voltage up to 25V. Thermal considerations include package power dissipation and thermal resistance values depending on the package type.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum high side floating supply voltage is 625V.
The gate drive supply range is from 10V to 20V.
It is compatible with 3.3V, 5V, and 15V logic inputs.
The typical switching time is 220ns for Ton and 200ns for Toff.
It is available in a 14-SOIC package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.