| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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29 pcs
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29 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba 2SD635 is a silicon NPN power transistor featuring a Darlington configuration. It is designed for applications requiring high DC current gain and low saturation voltage. The transistor is housed in a TO-220C package, suitable for through-hole mounting.
Key electrical characteristics include a Collector-Emitter voltage (VCEO) of 60V and a continuous Collector current (IC) of 7A. The device offers a high DC current gain (hFE) ranging from 1000 to 15000 depending on the operating conditions. Saturation voltages are kept low, with VCEsat at 1.5V (typical) for IC=3A and IB=6mA, and 2.0V (typical) for IC=7A and IB=14mA.
Applications for the 2SD635 include high power switching, hammer drives, and pulse motor drives. Its complementary type is the 2SB673/675. The operating temperature range is from -50°C to 150°C, with a maximum junction temperature of 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Emitter voltage (VCEO) for the 2SD635 is 60V.
The maximum continuous Collector current (IC) for the 2SD635 is 7A.
The 2SD635 transistor comes in a TO-220C package.
The typical DC current gain (hFE-1) for the 2SD635 at IC=3A and VCE=3V is 2000.
The 2SD635 is used for high power switching, hammer drives, and pulse motor drives.