IPZ40N04S5-5R4
Infineon
The Infineon IPZ40N04S5-5R4 is an N-channel OptiMOS™-5 power MOSFET designed for automotive applications. It offers a 40V drain-source breakdown voltage and a continuous drain current of 40A.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,810 pcs
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2810 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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2,196 pcs
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2196 pcs | On Request | 1 | On Request | On Request | 1826+ | On Request | On Request | |
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30 pcs
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30 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IPZ40N04S5L-4R8 is an N-channel OptiMOS™-5 power MOSFET suitable for automotive applications. It features enhancement mode and logic-level gate operation. The device boasts a 40V drain-source breakdown voltage and a maximum on-state resistance of 4.8 mΩ at VGS=10V, ID=20A.
With an operating temperature range of -55°C to +175°C and AEC Q101 qualification, this MOSFET is built for demanding environments. It is supplied in a PG-TSDSON-8-32 package suitable for surface mounting.
Key electrical characteristics include a gate threshold voltage between 1.2V and 2.0V, and a continuous drain current of 40A. Dynamic characteristics such as input capacitance (Ciss) are typically 1170pF, and output capacitance (Coss) is typically 270pF.
| Qty | Low | High |
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| 1+ | $2.93 | $2.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source breakdown voltage (VDS) is 40V.
The typical on-state resistance is 3.9mΩ at VGS=10V, ID=20A, and 5.0mΩ at VGS=4.5V, ID=20A.
The operating and storage temperature range is -55°C to +175°C.
Yes, the RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
It is supplied in the PG-TSDSON-8-32 package.