| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,312 pcs
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1312 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IPZ40N04S5-5R4 is a high-performance N-channel power MOSFET from the OptiMOS™-5 family, specifically qualified for automotive applications.
This device features a drain-source breakdown voltage of 40V and can handle a continuous drain current of 40A at 25°C case temperature. Its low on-state resistance, with a typical value of 4.4 mΩ at VGS=10V and ID=20A, contributes to efficient power handling.
The MOSFET operates within a temperature range of -55°C to +175°C and is housed in a PG-TSDSON-8-32 package, suitable for surface mounting. It also boasts 100% avalanche tested and MSL1 qualification.
Key electrical characteristics include a gate threshold voltage typically around 2.8V, and dynamic parameters such as input capacitance up to 1300pF and output capacitance up to 366pF.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-source breakdown voltage is 40V.
The maximum continuous drain current is 40A at 25°C case temperature.
The typical gate threshold voltage is 2.8V, with a range of 2.2V to 3.4V.
The maximum on-resistance is 5.4mΩ at VGS=10V and 6.3mΩ at VGS=7V.
The operating and storage temperature range is -55°C to +175°C.
The device is supplied in a PG-TSDSON-8-32 surface-mount package.
The typical total gate charge is 17nC, with a maximum of 23nC.