IPW60R070CFD7
Infineon
The Infineon IPW60R070CFD7 is a 650V N-channel CoolMOS CFD7 power MOSFET. It offers a low on-resistance of 70mΩ and a typical gate charge of 67nC.
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17,333 pcs
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17333 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
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1,477 pcs
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1477 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IPW60R060P7 is a 600V N-channel power MOSFET from the CoolMOS P7 series. This 7th generation platform is designed using the superjunction principle, offering a revolutionary technology for high-voltage power MOSFETs.
Key electrical specifications include a maximum Drain-Source Voltage (Vds) of 650V, a maximum On-Resistance (Rds(on)) of 60mΩ, and a typical Gate Charge (Qg) of 67nC. It also features a pulsed drain current (Id,pulse) of 151A and an energy in output capacitance (Eoss) of 7.1µJ at 400V.
This MOSFET is suitable for hard and soft switching applications like PFC and LLC stages due to its outstanding commutation ruggedness and low ringing tendency. It provides significant reduction in switching and conduction losses, leading to more efficient, compact, and cooler switching applications. The device also boasts excellent ESD robustness greater than 2kV (HBM).
The IPW60R060P7 is packaged in a PG-TO 247-3 through-hole package. Its design facilitates ease of use and fast design-in, simplifying thermal management and enabling increased power density solutions.
The maximum Drain-Source Voltage (Vds) at Tj,max is 650V.
The maximum On-Resistance (Rds(on)) is 60mΩ.
The typical Gate Charge (Qg) is 67nC.
The IPW60R060P7 is supplied in a PG-TO 247-3 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The REACH status is REACH Unaffected.