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IPW60R070CFD7 The Infineon IPW60R070CFD7 is a 650V N-channel CoolMOS CFD7 power MOSFET. It offers a low on-resistance of 70mΩ and a typical gate charge of 67nC.
Mfr Part #:

IPW60R070CFD7

Available from 3 distributors
Mfr Name: Infineon
Infineon
The Infineon IPW60R070CFD7 is a 650V N-channel CoolMOS CFD7 power MOSFET. It offers a low on-resistance of 70mΩ and a typical gate charge of 67nC.
✓ Total Stock: 8,754 pcs

IPW60R070CFD7 Available from 3 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
7,133 pcs
On Request
7133 pcs On Request 1 On Request On Request 19+ On Request On Request
Xingangxin ✓
Non-Authorised Inventory information
1,321 pcs
On Request
1321 pcs On Request 1 On Request On Request On Request On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
300 pcs
On Request
300 pcs On Request 1 On Request On Request 18+ On Request On Request
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IPW60R070CFD7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Gate Charge
Industrial Grade
Lead Spacing
Lead Style
Mounting Type
Package / Case
SVHC Present
Storage Temperature
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IPW60R070CFD7 Description

Short technical summary and product information.

The Infineon IPW60R070CFD7 is a high-performance N-channel power MOSFET from the CoolMOS CFD7 series. Designed for soft-switching applications such as phase-shift full-bridge (ZVS) and LLC topologies, this transistor features a maximum drain-source voltage of 650V and a maximum on-resistance of 70mΩ. Its optimized platform offers reduced gate charge (Qg) of 67nC typical and best-in-class reverse recovery charge (Qrr).

 

This MOSFET is suitable for applications including server, telecom, and EV charging. It boasts an ultra-fast body diode, low gate charge, and improved ruggedness for hard commutation. The device is qualified for industrial applications according to JEDEC47/20/22 standards.

 

The IPW60R070CFD7 is housed in a PG-TO 247-3 package, designed for through-hole mounting. Its advanced CoolMOS CFD7 technology ensures high efficiency and reliability, enabling increased power density solutions.

IPW60R070CFD7 Quick Information

Product Type: MOSFET
Series: CoolMOS CFD7
Canonical Name: Infineon IPW60R070CFD7 N-Channel Power MOSFET
Subcategory: N-Channel Power MOSFET

IPW60R070CFD7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPW60R070CFD7 Features

  • 650V drain-source voltage rating.
  • 70mΩ maximum on-resistance.
  • 67nC typical gate charge.
  • Ultra-fast body diode included.
  • PG-TO 247-3 through-hole package.

IPW60R070CFD7 Applications

  • Optimized for soft-switching topologies.
  • Suitable for phase-shift full-bridge (ZVS).
  • Used in LLC resonant converters.
  • Applications in server power supplies.
  • Ideal for telecom power systems.

IPW60R070CFD7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage (Vds) of the IPW60R070CFD7?

The maximum drain-source voltage is 650V.

What package type is the IPW60R070CFD7 available in?

The device is available in a PG-TO 247-3 through-hole package.

What is the on-resistance of the IPW60R070CFD7?

The maximum on-resistance is 70mΩ.

What is the typical gate charge of the IPW60R070CFD7?

The typical gate charge is 67nC.

What is the pulsed drain current rating of the IPW60R070CFD7?

The pulsed drain current rating is 129A.

What is the body diode diF/dt of the IPW60R070CFD7?

The body diode diF/dt is 1300A/µs.

What is the output capacitance energy loss (Eoss) at 400V?

The output capacitance energy loss (Eoss) is 7.7µJ at 400V.

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