IPP60R040C7
Infineon Technologies
The Infineon Technologies IPP60R040C7 is a 650V Power MOSFET designed for high-voltage applications. It features a low on-resistance and is housed in a TO-220 package.
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6,689 pcs
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6689 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
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3,421 pcs
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3421 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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480 pcs
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480 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
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The Infineon IPW60R040C7 is a 600V CoolMOS C7 N-channel Power MOSFET designed for high-voltage power applications. This device utilizes superjunction technology to achieve superior performance, including a low on-resistance of 40mΩ and high efficiency due to optimized figures of merit like RDS(on)*Eoss and RDS(on)*Qg.
Key electrical characteristics include a maximum drain-source voltage of 650V, a typical gate charge of 107nC, and a continuous drain current of 73A at Tj<150°C. The MOSFET also offers increased ruggedness with a dv/dt limit of 120V/ns.
Packaged in a PG-TO 247 through-hole package, the IPW60R040C7 is suitable for demanding applications such as Power Factor Correction (PFC) and PWM stages in high-performance Switched-Mode Power Supplies (SMPS). These applications include computing, server, telecom, and solar power systems, benefiting from higher switching frequencies and increased power density.
This component is qualified for industrial-grade applications according to JEDEC standards. Its design facilitates higher system efficiency by reducing switching losses.
| Qty | Low | High |
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| 1+ | $1.87 | $1.87 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) at Tj,max is 650V.
The maximum on-resistance (RDS(on)) is 40mΩ.
The typical gate charge (Qg) is 107nC.
The IPW60R040C7 is supplied in a PG-TO 247 package.
Yes, the RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.