| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,600 pcs
|
1600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
300 pcs
|
300 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Mounting Type | |
| Tape & Reel |
The Infineon Technologies IPP60R040C7 is a 650V CoolMOS C7 Power MOSFET. This device is designed using the superjunction principle, offering high voltage capability with low on-resistance.
Key electrical specifications include a maximum Drain-Source Voltage of 650V, a maximum On-Resistance of 40mΩ, and a typical Gate Charge of 107nC. It also features a continuous drain current of 73A at Tj<150°C and a pulsed drain current of 211A.
This MOSFET is suitable for hard and soft switching applications such as PFC and high-performance LLC stages. Its design benefits include increased efficiency due to low switching losses and higher power density solutions. The device is qualified for industrial-grade applications according to JEDEC standards.
The IPP60R040C7 is packaged in a TO-220 case and is designed for through-hole mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 650V.
The maximum on-resistance is 40mΩ.
The typical gate charge is 107nC.
The continuous drain current is 73A at Tj<150°C.
It is supplied in a PG-TO 220 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.