TMBT3906.LMT
Toshiba
The Toshiba TMBT3906.LMT is a single bipolar junction transistor (BJT) in the Transistors - Bipolar (BJT) - Single category. It is RoHS3 Compliant and has an MSL rating of 1 Unlimited.
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8,200 pcs
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8200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IPT60R125CFD7 is a high-performance power MOSFET from the CoolMOS™ CFD7 series, designed for soft switching applications like phase-shift full-bridge (ZVS) and LLC topologies. This transistor features a 650V drain-source voltage and a low on-resistance of 125 mΩ, contributing to high efficiency in resonant circuits.
Key electrical characteristics include a typical gate charge of 31 nC and a continuous drain current of 58A. The device also boasts an ultra-fast body diode with excellent reverse recovery charge and improved turn-off behavior, enhancing ruggedness in hard commutation scenarios. Its optimized platform provides a balance of ease-of-use and performance, enabling increased power density solutions.
The IPT60R125CFD7 is housed in a PG-HSOF-8 package, suitable for various industrial applications. It is fully qualified according to JEDEC standards for industrial use, ensuring reliability and robust performance in demanding environments.
| Qty | Low | High |
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| 1+ | $1.88 | $1.88 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 650 V.
The typical on-resistance is 125 mΩ.
The typical gate charge is 31 nC.
The continuous drain current is 58 A.
It is supplied in the PG-HSOF-8 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.