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IPT015N10N5 The Infineon IPT015N10N5 is an N-channel MOSFET designed for high-frequency switching applications. It offers a low on-resistance and high current capability.
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IPT015N10N5

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Mfr Name: 3PEAK
3PEAK
The Infineon IPT015N10N5 is an N-channel MOSFET designed for high-frequency switching applications. It offers a low on-resistance and high current capability.
✓ Total Stock: 2 pcs

IPT015N10N5 Available from 1 distributor

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2 pcs
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IPT015N10N5 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Gate Charge
Halogen Free
Mounting Type
Package / Case
Power Dissipation
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IPT015N10N5 Description

Short technical summary and product information.

The Infineon IPT015N10N5 is a high-performance N-channel MOSFET from the OptiMOS 5 family, rated for 100V.

 

Key electrical characteristics include a maximum on-resistance of 1.5 mΩ at VGS=10 V and ID=353 A, and a continuous drain current of 353 A at 25°C case temperature. It also features a gate charge of 169 nC and an output charge of 213 nC.

 

This MOSFET is ideal for high-frequency switching and synchronous rectification applications due to its excellent gate charge x RDS(on) product (FOM). It is 100% avalanche tested for reliability.

 

The IPT015N10N5 is supplied in the PG-HSOF-8 package, suitable for surface mount applications. It is Pb-free and Halogen-free compliant.

IPT015N10N5 Quick Information

Product Type: MOSFET
Series: OptiMOS 5
Canonical Name: IPT015N10N5 N-channel Power MOSFET
Subcategory: N-channel MOSFET

IPT015N10N5 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPT015N10N5 Features

  • 100V drain-source voltage rating.
  • Very low on-resistance of 1.5 mΩ.
  • High continuous drain current of 353A.
  • Ideal for high-frequency switching.
  • Pb-free and Halogen-free compliant.

IPT015N10N5 Applications

  • Suitable for high-current switching circuits.
  • Ideal for power management in DC-DC converters.
  • Used in motor drive and inverter applications.
  • Works in battery protection and load switches.

IPT015N10N5 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the IPT015N10N5?

The maximum drain-source voltage (VDS) for the IPT015N10N5 is 100 V.

What is the maximum on-resistance of the IPT015N10N5 MOSFET?

The maximum on-resistance (RDS(on)) for the IPT015N10N5 is 1.5 mΩ when VGS is 10 V and ID is 353 A.

What is the continuous drain current rating of the IPT015N10N5 at 25°C?

The continuous drain current (ID) for the IPT015N10N5 is 353 A at a case temperature of 25°C with VGS=10 V.

What package type is the IPT015N10N5 MOSFET supplied in?

The IPT015N10N5 MOSFET is supplied in the PG-HSOF-8 package.

Is the IPT015N10N5 RoHS compliant?

Yes, the IPT015N10N5 is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the IPT015N10N5?

The Moisture Sensitivity Level (MSL) for the IPT015N10N5 is 1 Unlimited.

IPT015N10N5 Alternate Parts

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IPT015N10N5
IPT015N10N5
Infineon Technologies
The Infineon Technologies IPT015N10N5 is an N-channel Power MOSFET designed for high-frequency switching applications. It offers a 100V drain-source voltage and a low on-resistance.
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