TK25A60X,S5X(M
Toshiba
The Toshiba TK25A60X,S5X(M is an N-channel MOSFET designed for switching regulator applications. It features a 600V drain-source voltage and a 25A drain current.
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50 pcs
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50 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
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The Infineon IPP65R190C6XKSA1 is an N-channel power MOSFET from the CoolMOS family. This device is designed for high-performance power applications.
Key electrical characteristics include a breakdown voltage range of 500V to 950V, with a typical maximum breakdown voltage of 650V. This makes it suitable for applications requiring high voltage handling capabilities.
The MOSFET is designed for efficient power conversion and switching. Its CoolMOS technology offers advantages in terms of low on-resistance and fast switching speeds, contributing to improved system efficiency and reduced power losses.
Further specifications regarding Rds On, gate charge, and operating temperature would be detailed in the datasheet, providing engineers with the necessary parameters for detailed design and simulation.
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Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage range is 500V to 950V, with a typical maximum of 650V.
It is an N-channel CoolMOS power MOSFET.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
Yes, the REACH status is REACH Unaffected.