Mfr Part #:

IPP60R180P7

Mfr Name: Infineon

The Infineon IPP60R180P7 is a 600V N-channel CoolMOS P7 series power MOSFET. It offers a low on-resistance of 180mΩ and is housed in a PG-TO 220-3 package.

✓ Total Stock: 8,005 pcs

$ Price Range: $1.67

IPP60R180P7 Available from 3 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	5,500 pcs On Request	5500 pcs	On Request	1	On Request	On Request	20+	On Request	On Request
Xingangxin ✓ Non-Authorised Inventory information	2,005 pcs On Request	2005 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Smaxon Electronics ✓ Non-Authorised Inventory information	500 pcs On Request	500 pcs	On Request	1	On Request	On Request	20+	On Request	On Request

IPP60R180P7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

SELECT ALL

Category	New Products
Manufacturer Name	Infineon
Gate Charge	25 nC
Tape & Reel	No

View Similar Products (0)

IPP60R180P7 Description

Short technical summary and product information.

The Infineon IPP60R180P7 is a 600V N-channel power MOSFET from the CoolMOS P7 series. This 7th generation platform is designed for high voltage power applications, offering a balance of efficiency and ease of use.

Key electrical specifications include a maximum Drain-Source Voltage (Vds) of 650V and a maximum On-Resistance (Rds(on)) of 180mΩ. It features a typical Gate Charge (Qg) of 25nC and a pulse drain current (Id,pulse) of 53A. The device also exhibits excellent ESD robustness greater than 2kV (HBM).

The IPP60R180P7 is supplied in a PG-TO 220-3 package, suitable for through-hole mounting. Its design facilitates efficient switching and reduced losses, making it suitable for applications such as PFC stages, hard-switching PWM stages, and resonant switching stages.

IPP60R180P7 Quick Information

Product Type: MOSFET

Series: CoolMOS P7

Canonical Name: Infineon IPP60R180P7 N-Channel Power MOSFET

Subcategory: Power MOSFET

IPP60R180P7 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

IPP60R180P7 Estimated Pricing

Qty	Low	High
1+	$1.67	$1.67

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPP60R180P7 Features

650V Drain-Source Voltage rating.
180mΩ maximum On-Resistance.
25nC typical Gate Charge.
PG-TO 220-3 package for through-hole.
Excellent ESD robustness >2kV.

IPP60R180P7 Applications

Suitable for PFC stages.
Used in hard-switching PWM stages.
Applicable to resonant switching stages.
Ideal for adapters and lighting.
Designed for server and telecom.

IPP60R180P7 FAQs

6 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage of the IPP60R180P7?

The drain-source voltage (Vds) of the IPP60R180P7 is 650V.

What package does the IPP60R180P7 come in?

The IPP60R180P7 is packaged in PG-TO 220-3.

What is the maximum Rds(on) for this MOSFET?

The maximum Rds(on) is 180 milliohms.

What is the gate charge of the IPP60R180P7?

The gate charge (Qg) is 25 nanocoulombs.

What is the pulsed drain current rating?

The pulsed drain current is 53 amperes.

What is the ESD robustness of the device?

The device has an ESD robustness of greater than 2kV (HBM).

IPP60R180P7 Alternate Parts

Same form/fit/function or matching attribute configuration across different manufacturers.

View All Alternate Parts

IPD60R180P7S

Infineon Technologies

The Infineon Technologies IPD60R180P7S is a 600V CoolMOS P7 series N-channel power MOSFET. It features a maximum drain-source voltage of 650V and a typical gate charge of 25 nC.

View Part

BSC190N15NS3 G